Photoluminescence characteristics of GaN layers grown on SOI substrates and relation to material properties

Materials Research Society Symposium - Proceedings

Volumn 482, Issue , 1997, Pages 307-312

  Philippe, A ^a   Bru Chevallier, C ^a   Guillot, G ^a   Cao, J ^a   Pavlidis, D ^a   Eisenbach, A ^a  

^a UNIVERSITÉ DE LYON   (France)

Author keywords

[No Author keywords available]

Indexed keywords

FILM GROWTH; HALL EFFECT; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NITRIDES; PHOTOLUMINESCENCE; SILICON ON INSULATOR TECHNOLOGY; SUBSTRATES;

GALLIUM NITRIDE;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0031366785     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-482-307     Document Type: Conference Paper

References (15)