Kinetic energy dependence of TiSi2 film growth from low energy Ti+ ion beams

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 157, Issue 1-4, 1999, Pages 220-225

  Lee, S M ^a   Ada, E T ^a   Lee, H ^a   Marton, D ^a   Rabalais, J W ^a  

^a University of Houston   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; DEPOSITION; FILM GROWTH; ION BEAMS; KINETIC ENERGY; POSITIVE IONS; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SAPPHIRE; SEMICONDUCTING SILICON; TITANIUM; TITANIUM COMPOUNDS; X RAY PHOTOELECTRON SPECTROSCOPY;

DEPTH PROFILE; ION BEAM DEPOSITION; STOICHIOMETRIC FILMS; TITANIUM SILICIDE;

THIN FILMS;

EID: 0033516756     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(99)00416-4     Document Type: Article

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