Growth of 2″ InP and GaAs crystals by the vertical gradient freeze (VGF) technique and characterization

Journal of Crystal Growth

Volumn 166, Issue 1-4, 1996, Pages 646-650

  Amon, J ^a   Zemke, D ^a   Hoffmann, B ^b   Muller G ^a  

^a UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

^b Freiberger Elektronikwerkstoffe GmbH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BOUNDARY CONDITIONS; COMPUTER SIMULATION; ELECTRIC PROPERTIES; ETCHING; MATHEMATICAL MODELS; OPTICAL PROPERTIES; OPTIMIZATION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DOPING;

DOPANTS; ETCH PIT DENSITY; THERMAL BOUNDARY CONDITIONS; VERTICAL GRADIENT FREEZE (VGF) TECHNIQUE;

CRYSTAL GROWTH;

EID: 0030230380     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-0248(96)00039-5     Document Type: Article

References (10)

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4. M. Tatsumi et al., Proc. 1st Int. Conf. on InP and Related Materials for Advanced Electronics and Optical Devices, Oklahoma (1989) p. 18.
5. G. Müller, D. Hofmann and N. Schäfer, IEEE Publ. Service, New York (USA) Proceedings, Vols. 60-65 (1993).
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