Ion beam processing of SiC for optical application

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 148, Issue 1-4, 1999, Pages 545-550

  Wesch, W ^a   Heft, A ^a   Menzel, R ^a   Bachmann, T ^a   Peiter, G ^b   Hobert, H ^b   Hoche T ^c   Dannberg, P ^d   Brauer A ^d  

^a FRIEDRICH SCHILLER UNIVERSITY JENA   (Germany)

^b LEIBNIZ INSTITUTE OF PHOTONIC TECHNOLOGY   (Germany)

^c Institut für Glaschemie   (Germany)

^d FRAUNHOFER INSTITUTE FOR APPLIED OPTICS AND PRECISION ENGINEERING   (Germany)

Author keywords

Ion implantation; Optical properties; SiC; Wave guides

Indexed keywords

AMORPHIZATION; ANNEALING; ETCHING; ION BEAMS; ION IMPLANTATION; OPTICAL WAVEGUIDES; OXYGEN; REFRACTIVE INDEX; SEMICONDUCTING FILMS; SEMICONDUCTING SILICON COMPOUNDS; SILICON CARBIDE;

ION BEAM PATTERNING; WET ETCHING;

OPTICAL FILMS;

EID: 0033513801     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(98)00826-X     Document Type: Article

References (10)

1. W. Wesch, Nucl. Instr. and Meth. B 116 (1996) 305.
2. Y.M. Lin, P.R. Prucnal, IEEE Photonics Technol. Lett. 5 (1993) 704.
3. W. Wesch, A. Heft, H. Hobert, G. Peiter, E. Wendler, T. Bachmann, Nucl. Instr. and Meth. B 141 (1998) 160.
4. J.F. Ziegler, J.P. Biersack, U. Littmark, The Stopping and Range of Ions in Solids, Pergamon Press, New York, 1985.
5. A. Heft, E. Wendler, J. Heindl, T. Bachmann, E. Glaser, H.P. Strunk, W. Wesch, Nucl. Instr. and Meth. B 113 (1996) 239.
6. C.T. Kirk, Phys. Rev. B 38 (1988) 1255.
7. W.G. Spitzer, D.A. Kleinman, Phys. Rev. 121 (1961) 1324.
8. H. Looyenga, Physica 31 (1965) 401.
9. R. Menzel, T. Bachmann, W. Wesch, H. Hobert, J. Vacuum Sci. and Technol. B 16 (1998) 540.
10. R. Menzel, T. Bachmann, F. Machalett, W. Wesch, U. Lang, M. Wendt, C. Musil, R. Mühle, Appl. Surf. Sci. 136 (1998) 1.