Nano-indentation of ion-beam modified HfN/Si system: Identification of the amorphized inter-layer

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 148, Issue 1-4, 1999, Pages 110-115

  Nowak, R ^a   Li, C L ^b   Okada, T ^a   Yoshida, F ^a  

^a HIROSHIMA UNIVERSITY   (Japan)

^b OSAKA UNIVERSITY   (Japan)

Author keywords

Amorphization; Finite element simulation; Indentation; Ion bombardment; Surface deformation

Indexed keywords

AMORPHIZATION; AMORPHOUS FILMS; AMORPHOUS SILICON; COMPUTER SIMULATION; DEFORMATION; FINITE ELEMENT METHOD; GOLD; HAFNIUM COMPOUNDS; HARDNESS; ION BEAMS; MATHEMATICAL MODELS; RADIATION EFFECTS;

HAFNIUM NITRIDE; NANOINDENTATION TECHNIQUE;

ION BOMBARDMENT;

EID: 0033513724     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(98)00843-X     Document Type: Article

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