Post-deposition relaxation of internal stress in sputter-grown HfN thin films bombarded with carbon ions

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 148, Issue 1-4, 1999, Pages 232-237

  Nowak, R ^a   Yoshida, F ^a   Miyagawa, Y ^b   Miyagawa, S ^b  

^a HIROSHIMA UNIVERSITY   (Japan)

^b Natl Research Institute of Nagoya   (Japan)

Author keywords

Internal stress; Ion bombardment; Relaxation; Sputter deposition; Thin films

Indexed keywords

AMORPHIZATION; CARBON; COMPRESSIVE STRESS; ION BOMBARDMENT; RADIATION DAMAGE; RESIDUAL STRESSES; SILICON WAFERS; SPUTTER DEPOSITION; STRESS RELAXATION; THIN FILMS;

ION ENERGY; THERMAL SPIKES;

HAFNIUM COMPOUNDS;

EID: 0033513815     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(98)00841-6     Document Type: Article

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