Impact of annealing ambient on the performance of excimer-laser-annealed polysilicon thin-film transistors

Journal of the Electrochemical Society

Volumn 146, Issue 9, 1999, Pages 3500-3505

  Voutsas, Apostolos T ^a   Marmorstein, Aaron M ^b   Solanki, Raj ^b  

^a Sharp Microelectro Technol Inc   (United States)

^b OREGON HEALTH AND SCIENCE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AIR; ANNEALING; ARGON; ENERGY GAP; EXCIMER LASERS; HELIUM; NITROGEN; POLYCRYSTALLINE MATERIALS; SEMICONDUCTING FILMS; SEMICONDUCTING SILICON; THERMAL EFFECTS; VACUUM APPLICATIONS;

EXCIMER LASER ANNEALING (ELA);

THIN FILM TRANSISTORS;

EID: 0033365604     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1392504     Document Type: Article

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