The anomalous behavior of hydrogenated/unhydrogenated polysilicon thin-film transistors under electric stress

IEEE Electron Device Letters

Volumn 18, Issue 8, 1997, Pages 382-384

  Lee, K Y ^a   Fang, Y K ^a   Chen, C W ^a   Huang, K C ^a   Liang, M S ^b   Wuu, S G ^b  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; HYDROGENATION; PASSIVATION; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE MODELS;

ELECTRIC STRESS; PLASMA HYDROGENATION;

THIN FILM TRANSISTORS;

EID: 0031208839     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.605446     Document Type: Article

References (14)

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