NO2 detection by a resistive device based on n-InP epitaxial layers

Sensors and Actuators, B: Chemical

Volumn 59, Issue 2, 1999, Pages 89-93

  Talazac, L ^a   Blanc, J P ^a   Germain, J P ^a   Pauly, A ^a  

^a UNIVERSITÉ CLERMONT AUVERGNE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ATMOSPHERIC HUMIDITY; CHEMISORPTION; COMPOSITION EFFECTS; ELECTRIC CONDUCTANCE; ELECTRIC RESISTANCE; EPITAXIAL GROWTH; IONIZATION OF GASES; NITROGEN OXIDES; OHMIC CONTACTS; SEMICONDUCTING FILMS; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DOPING;

NITROGEN DIOXIDE;

CHEMICAL SENSORS;

EID: 0033358159     PISSN: 09254005     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0925-4005(99)00201-4     Document Type: Article

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