Shrinkage of grown-in defects in Czochralski silicon during thermal annealing in vacuum

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 37, Issue 7 A, 1998, Pages

  Ueki, Takemi ^a   Itsumi, Manabu ^a   Takeda, Tadao ^a   Yosbida, Kiyokazu ^a   Takaoka, Akio ^a   Nakajima, Sigeru ^a  

^a NTT CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTAL DEFECTS; CRYSTAL GROWTH FROM MELT; INTERFACIAL ENERGY; SEMICONDUCTOR GROWTH; SHRINKAGE; TRANSMISSION ELECTRON MICROSCOPY; VACUUM APPLICATIONS;

CZOCHRALSKI SILICON;

SEMICONDUCTING SILICON;

EID: 0032120436     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.37.l771     Document Type: Article

References (12)