Modeling and real-time process monitoring of organometallic chemical vapor deposition of III-V phosphides and nitrides at low and high pressures

Materials Research Society Symposium - Proceedings

Volumn 569, Issue , 1999, Pages 59-70

  Bachmann, K J ^a   Cardelino, B H ^b   Moore, C E ^d   Cardelino, C A ^c   Sukidi, N ^a,e   Mccall, S ^a  

^a North Carolina State University   (United States)

^b SPELMAN COLLEGE   (United States)

^c GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^d NASA MARSHALL SPACE FLIGHT CENTER   (United States)

^e MOTOROLA INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL BEAM EPITAXY; COMPUTER SIMULATION; EPITAXIAL GROWTH; MATHEMATICAL MODELS; MOLECULAR DYNAMICS; NITRIDES; PHOSPHORUS COMPOUNDS; PRESSURE EFFECTS; PYROLYSIS; RATE CONSTANTS; REACTION KINETICS; SPECTROSCOPY;

INTERNAL TRANSMISSION SPECTROSCOPY; P-POLARIZED REFLECTANCE SPECTROSCOPY; PRINCIPAL ANGLE SPECTROSCOPY;

METALLORGANIC CHEMICAL VAPOR DEPOSITION;

EID: 0033355027     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-569-59     Document Type: Conference Paper

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