Properties of reactively sputter-deposited TaN thin films

Thin Solid Films

Volumn 236, Issue 1-2, 1993, Pages 347-351

  Sun, Xin ^a   Kolawa, Elzbieta ^a   Chen, Jen Sue ^a   Reid, Jason S ^a   Nicolet, Marc A ^a  

^a CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS MATERIALS; ANNEALING; ELECTRIC CONDUCTIVITY; FILM GROWTH; GRAIN SIZE AND SHAPE; NITROGEN; PHASE DIAGRAMS; SPUTTER DEPOSITION; STRUCTURE (COMPOSITION); TANTALUM COMPOUNDS; TRANSMISSION ELECTRON MICROSCOPY; VACUUM APPLICATIONS;

AMORPHOUS PHASE; NITROGEN FLOW RATE; REACTIVE RF SPUTTERING; TANTALUM NITRIDE; TRANSMISSION ELECTRON MICROGRAPH; VACUUM ANNEALING; X-RAY DIFFRACTION;

THIN FILMS;

EID: 0027840806     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/0040-6090(93)90694-K     Document Type: Article

References (24)

1. Effects of Nitrogen, Methane, and Oxygen on Structure and Electrical Properties of Thin Tantalum Films
2. Thermally stable tantalum nitride/silicon Schottky barriers
3. Properties of direct current magnetron reactively sputtered TaN
4. Diffusion barrier in semiconductor contact metallization
5. Superconducting Thin Films of Niobium, Tantalum, Tantalum Nitride, Tantalum Carbide, and Niobium Nitride
6. Sputtered W–N diffusion barriers