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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 38, Issue 12 B, 1999, Pages 7099-7102

Photoacid structure effects on environmental stability of 193 nm chemically amplified positive resists

(4) Yoshino, Hiroshi a Itani, Toshiro a Takimoto, Michiya a Tanabe, Hiroyoshi a

a NEC CORPORATION (Japan)

Author keywords

193nm lithography; Chemically amplified resist; Environmental stability; Generated photoacid; Post exposure bake; Post exposure delay

Indexed keywords

ACTIVATION ENERGY; COPOLYMERS; ENVIRONMENTAL TESTING; NANOTECHNOLOGY;

CHEMICALLY AMPLIFIED RESISTS; ENVIRONMENTAL STABILITY; PHOTOACID;

PHOTORESISTS;

EID: 0033351686 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.38.7099 Document Type: Article

Times cited : (4)

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