Multiatomic step formation on GaAs(001) vicinal surfaces during thermal treatment

Journal of Crystal Growth

Volumn 160, Issue 3-4, 1996, Pages 235-240

  Ohkuri, K ^a   Ishizaki, J ^a   Hara, S ^a   Fukui, T ^a  

^a HOKKAIDO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; ATOMS; EVAPORATION; HEAT TREATMENT; HIGH TEMPERATURE OPERATIONS; MORPHOLOGY; PARAMETER ESTIMATION; PHOTOLUMINESCENCE; SEMICONDUCTOR QUANTUM WELLS; SURFACE PHENOMENA; SURFACES;

GALLIUM ARSENIDE VICINAL SURFACES; GALLIUM ARSENIDE WAFER; GALLIUM ATOM EVAPORATION; MULTIATOMIC STEP FORMATION; PHOTOLUMINESCENCE PEAK ENERGY SHIFTS; STEP BUNCHING;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0030105604     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-0248(95)00455-6     Document Type: Article

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