Effects of etch-induced damage and contamination on the physical and electrical properties of cobalt sulcides

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 38, Issue 10, 1999, Pages 5788-5791

  Kim, Hyeon Soo ^a   Yoon, Jong Ku ^b   Lee, Young Hyuk ^c   Young Wook, K O ^d   Park, Jong Wan ^a   Yeom, Geun Young ^b  

^a Sungkyunkwan University   (South Korea)

^b National Institute of Technology and Quality   (South Korea)

^c Hynix Semiconductor Inc   (South Korea)

^d Hanyang University   (South Korea)

Author keywords

Contact suicides; Damage; Helicon plasma etching; Oxide etching; Residue

Indexed keywords

ANNEALING; COBALT COMPOUNDS; CONTAMINATION; ELECTRIC RESISTANCE; PLASMA ETCHING; SEMICONDUCTOR PLASMAS;

COBALT SILICIDES; HELICON PLASMA ETCHING;

SILICON WAFERS;

EID: 0033341850     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.38.5788     Document Type: Article

References (11)

1. P. Singer: Scmicond. Int. 20 (1997) June, 109.
2. Y. Horiike, K. Kubota, H. Shindo and T. Fukasawa: J. Vac. Sci. Technol. A 13 (1995) 801.
3. T. Fukasawa, K. Kubota, H. Shindo and Y. Horiike: Jpn. J. Appl. Phys. 33 (1994) 7042.
4. H. S. Kim, W. J. Nam, G. Y. Ycom, H. J. Lee, J. H. Kim and K. W. Whang: J. Vac. Sci. Technol. A 14 (1996) 1062.
5. W. J. Nam, G. Y. Yeom, J. H. Kim, K. W. Whang and J. K. Yoon: J. Vac. Sci. Technol. A 15 (1997) 590.
6. Y. Tezuka, N. Kitano and N. Nakano: J. Electrochem. Soc. 142 (1995) 3569.
7. T. Hara, M. Sato and K. Sakiyama: J. Electrochem. Soc. 145 (1998) L67.
8. H. S. Kim, W. J. Lee, G. Y. Ycom, J. H. Kim and K. W. Whang: J. Electrochem. Soc. 146 (1999) 1517.
9. Y. H. Lee: J. Vac. Sci. Technol. A 10 (1992) 1318.
10. S. J. Fonash, C. R. Viswanathan and Y. D. Chan: Solid State Technol. (1994), July, 99.
11. S. P. Murarka: Metallization Theory and Practice for VISI and VLSI (Butterworth-Heinemann Press, Boston, 1993) p. 188.