Etch-induced physical damage and contamination during highly selective oxide etching using C4F8/H2 helicon wave plasmas

Journal of the Electrochemical Society

Volumn 146, Issue 4, 1999, Pages 1517-1522

  Kim, Hyeon Soo ^a   Lee, Weon Jeong ^a   Yeom, Geun Young ^a   Kim, Jung Hun ^b   Whang, Ki Woong ^b  

^a Sungkyunkwan University   (South Korea)

^b Seoul National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CARBON; CONTAMINATION; ELECTROLYTIC CLEANING; FLUORINE; HELICONS; HYDROGEN; OXIDES; OXYGEN; SILICON WAFERS; SURFACES; WAVE PLASMA INTERACTIONS;

CARBON BONDING STATES; ETCH INDUCED PHYSICAL DAMAGE; HELICON WAVE PLASMAS; HIGHLY SELECTIVE OXIDE ETCHING; OXYGEN PLASMA CLEANING; RESIDUE;

PLASMA ETCHING;

EID: 0032641034     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1391797     Document Type: Article

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