N2O oxidation kinetics of ultra thin thermally grown silicon nitride: an angle resolved X-ray photoelectron spectroscopy study

Materials Research Society Symposium - Proceedings

Volumn 567, Issue , 1999, Pages 107-112

  Mao, A Y ^a   Lozano, J ^a   White, J M ^a   Kwong, D L ^a  

^a UNIVERSITY OF TEXAS AT AUSTIN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMMONIA; ANNEALING; FILM GROWTH; HIGH TEMPERATURE OPERATIONS; INTERFACES (MATERIALS); NITROGEN COMPOUNDS; OXIDATION; OXIDES; REACTION KINETICS; SILICON NITRIDE; TEMPERATURE; X RAY PHOTOELECTRON SPECTROSCOPY;

ANGLE RESOLVED X RAY PHOTOELECTRON SPECTROSCOPY; INTERFACIAL OXIDE; NITROGEN OXIDE; OXIDATION KINETICS; RAPID THERMAL PROCESSING NITRIDATION;

ULTRATHIN FILMS;

EID: 0033339396     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-567-107     Document Type: Conference Paper

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