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Journal of Crystal Growth

Volumn 175-176, Issue PART 2, 1997, Pages 1033-1038

Incorporation of As2 in InAsxP1-x and its application to InAsxP1-x/InP quantum well structures

(2) Hopkinson, M a David, J P R a

a UNIVERSITY OF SHEFFIELD (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC; COMPOSITION EFFECTS; MOLECULAR BEAM EPITAXY; SATURATION (MATERIALS COMPOSITION); SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR GROWTH; SUBSTRATES;

INDIUM ARSENIC PHOSPHIDE; INDIUM ARSENIDE;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0031143378 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(97)01228-1 Document Type: Article

Times cited : (4)

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