Formation of carbon nitride films by reactive high-density plasma sputtering with excitation of m=0 mode helicon wave

Surface and Coatings Technology

Volumn 116-119, Issue , 1999, Pages 11-17

  Miyake, S ^a   Setsuhara, Y ^a   Shibata, K ^a   Kumagai, M ^b   Sakawa, Y ^c   Shoji, T ^c  

^a OSAKA UNIVERSITY   (Japan)

^b Kanagawa High Technology Foundation   (Japan)

^c NAGOYA UNIVERSITY   (Japan)

Author keywords

Carbon nitride; Helicon wave; High density plasma; Plasma sputtering; Superhard nitride

Indexed keywords

EMISSION SPECTROSCOPY; HELICAL ANTENNAS; HELICONS; NITRIDES; PLASMA APPLICATIONS; PLASMA DENSITY; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SPUTTERING; SYNTHESIS (CHEMICAL); X RAY PHOTOELECTRON SPECTROSCOPY;

CARBON NITRIDE; HIGH-DENSITY PLASMA; PLASMA SPUTTERING;

INORGANIC COATINGS;

EID: 0033335819     PISSN: 02578972     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0257-8972(99)00143-7     Document Type: Article

References (19)

1. Liu A.Y., Cohen M.L. Science. 245:1989;841.
2. Chen Y., Wang E.G., Chen F., Guo L.P. J. Phys. Condens. Matter. 8:1996;L685.
3. Zhang J.Q., Setsuhara Y., Miyake S., Kyoh B. Jpn J. Appl. Phys. 36:1997;6894.
4. Sebald T., Kaltofen R., Weise G. Surf. Coat. Technol. 98:1998;1280.
5. Fujimoto F., Ogata K. Jpn J. Appl. Phys. 32:1993;L420.
6. Sugiyama Y., Setsuhara Y., Miyake S., Sakawa Y., Shoji T. Makabe T. Proc. 13th Symp. on Plasma Processing, Division of Plasma Electronics, The Japan Society of Applied Physics. 1996;. p. 363.
7. Shoji T., Sakawa Y., Nakazawa S., Kadota K., Sato T. Plsama Sources Sci. Technol. 2:1993;5.
8. Boswell R.W. Plasma Phys. Controlled Fusion. 26:1984;1147.
9. Perry A.J., Vender D., Boswell R.W. J. Vac. Sci. Technol. B. 9:1991;310.
10. Chen F.F. J. Vac. Sci. Technol. A. 10:1992;1389.
11. Yasaka Y., Hara Y. Jpn J. Appl. Phys. 33:1994;5950.
12. Kida Y., Zhang J., Setsuhara Y., Kamai M., Miyake S., Sakawa Y., Shoji T. Makabe T. Proc. 12th Symp. on Plasma Processing. 1995;Division of Plasma Electronics, The Japan Society of Applied Physics, Tokyo. p. 209.
13. Sakawa Y., Koshikawa N., Shoji T. Appl. Phys. Lett. 69:1996;1695.
14. Sakawa Y., Koshikawa N., Shoji T. Plsama Sources Sci. Technol. 6:1997;96.
15. Miyake S., Setsuhara Y., Zhang J.Q., Kamai M., Kyoh B. Surf. Coat. Technol. 97:1997;768.
16. Nakayama N., Tsuchiya Y., Tamada S., Kosuge K., Nagata S., Takahiro K., Yamaguchi S. Jpn J. Appl. Phys. 32:1993;L1465.
17. Li D., Chu X., Cheng S.-C., Lin A.-W., Dravid V.P., Wong M.-S., Sproul W.D. Appl. Phys. Lett. 67:1995;203.
18. Zheng W.T., Sjöström H., Ivanov I., Xing K.Z., Broitman E., Salaneck W.R., Greene J.E., Sundgren J.-E. J. Vac. Sci. Technol. A. 14:1996;2696.
19. Marton D., Boyd K.J., Al-Bayati A.H., Todorov S.S., Rabalais J.W. Phys. Rev. Lett. 73:1994;118.