Zero-dimensional states in a quantum dot, formed at threshold in a disordered submicron silicon transistor

Semiconductor Science and Technology

Volumn 14, Issue 12, 1999, Pages 1119-1123

  Peters, M G ^a,c   Dijkhuis, J I ^a   Molenkamp, L W ^b  

^a UTRECHT UNIVERSITY   (Netherlands)

^b RWTH AACHEN UNIVERSITY   (Germany)

^c KPN RESEARCH   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTING SILICON; SEMICONDUCTOR QUANTUM DOTS; THERMAL EFFECTS;

DISORDERED SUBMICRON SILICON TRANSISTORS;

MOSFET DEVICES;

EID: 0033330523     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/14/12/319     Document Type: Article

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