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Solid-State Electronics

Volumn 40, Issue 1-8, 1996, Pages 237-240

Single electron charging and single electron tunneling in sub-micron AlGaAs/GaAs double barrier transistor structures

(3) Austing, D G a Honda, T a Tarucha, S a

a NTT Basic Research Laboratories (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC PROPERTIES; ELECTRON ENERGY LEVELS; ELECTRON TUNNELING; ELECTRONS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR QUANTUM DOTS;

COULOMB BLOCKADE; COULOMB CHARGING ENERGY; DOUBLE BARRIER STRUCTURE; SCHOTTKY SIDE GATE; SINGLE ELECTRON CHARGING; SINGLE ELECTRON TRANSISTOR; SINGLE ELECTRON TUNNELING;

TRANSISTORS;

EID: 0029700955 PISSN: 00381101 EISSN: None Source Type: Journal
DOI: 10.1016/0038-1101(95)00256-1 Document Type: Article

Times cited : (8)

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