Single electron charging and single electron tunneling in sub-micron AlGaAs/GaAs double barrier transistor structures

Solid-State Electronics

Volumn 40, Issue 1-8, 1996, Pages 237-240

  Austing, D G ^a   Honda, T ^a   Tarucha, S ^a  

^a Kashino Diverse Brain Research Laboratory of NTT Communication Science Laboratories   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC PROPERTIES; ELECTRON ENERGY LEVELS; ELECTRON TUNNELING; ELECTRONS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR QUANTUM DOTS;

COULOMB BLOCKADE; COULOMB CHARGING ENERGY; DOUBLE BARRIER STRUCTURE; SCHOTTKY SIDE GATE; SINGLE ELECTRON CHARGING; SINGLE ELECTRON TRANSISTOR; SINGLE ELECTRON TUNNELING;

TRANSISTORS;

EID: 0029700955     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(95)00256-1     Document Type: Article

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