Self-consistent calculations of the ground state and the capacitance of a 3D Si/SiO2 quantum dot

VLSI Design

Volumn 8, Issue 1-4, 1998, Pages 231-235

  Scholze, A ^a,b,c   Wettstein, A ^a   Schenk, A ^a   Fichtner, W ^a  

^a ETH ZURICH   (Switzerland)

^b UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

^c FRIEDRICH SCHILLER UNIVERSITY JENA   (Germany)

Author keywords

Capacitance; Self consistent calculations; Shell filling effects

Indexed keywords

SHELL-FILLING EFFECTS;

BAND STRUCTURE; CAPACITANCE; ELECTRONIC STRUCTURE; HETEROJUNCTIONS; PROBABILITY DENSITY FUNCTION; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MODELS; SILICA;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0032315408     PISSN: 1065514X     EISSN: None     Source Type: Journal    
DOI: 10.1155/1998/86580     Document Type: Article

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