Ultrathin TiO2 gate dielectric formation by annealing of sputtered Ti on nitrogen passivated Si substrates in nitric oxide ambient

Materials Research Society Symposium - Proceedings

Volumn 567, Issue , 1999, Pages 481-487

  Luan, H F ^a   Mao, A Y ^a   Lee, S J ^a   Luo, T Y ^a   Kwong, D L ^a  

^a The University of Texas at Austin   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC FILMS; INTERFACES (MATERIALS); LEAKAGE CURRENTS; MOS CAPACITORS; NITROGEN OXIDES; OXIDATION; RAPID THERMAL ANNEALING; REACTION KINETICS; SEMICONDUCTING SILICON; SPUTTER DEPOSITION; TITANIUM DIOXIDE; X RAY PHOTOELECTRON SPECTROSCOPY;

FILM QUALITY; TITANIUM DIOXIDE FILM;

THIN FILMS;

EID: 0033329267     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-567-481     Document Type: Conference Paper

References (8)

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