Process stability of ferroelectric PLZT thin film sputtering for FRAM production

Integrated Ferroelectrics

Volumn 26, Issue 1, 1999, Pages 9-19

  Suu, K ^a   Tani, N ^a   Chu, F ^b   Hickert, G ^b   Hadnagy, T D ^b   Davenport, T ^b  

^a ULVAC INC   (Japan)

^b Ramtron International Corporation   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITORS; FERROELECTRICITY; LASER ABLATION; MAGNETRON SPUTTERING; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING LEAD COMPOUNDS; SOL-GELS;

FERROELECTRIC PROPERTIES; NONVOLATILE FERROELECTRIC MEMORIES; PROCESS STABILITY;

THIN FILMS;

EID: 0033324992     PISSN: 10584587     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1080/10584589908215605     Document Type: Article

References (15)

1. For example, J. T. Evans, Jr and R. Womack., "An Experimantal 512-bit Nonvolatile Memory with Ferroelectric Storage Cell": IEEE J. Solid-State Circuits 23, pp.1171-1175, 1988.
2. 3 thin films by sol gel processing: Electrical, optical, and electro-optic properties": J. Appl. Phys. 48, pp.2717-2724, 1988.
3. M. Ishida, H. Matsunami and T. Tanaka., "Preparation and properties of ferroelectric PLZT thin films by RF sputtering": J. Appl. Phys. 48, pp.951, 1997.
4. 3 thin films prepared by RF planar magnetron sputtering": Appl. Phys. Lett. 42, pp.867, 1983.
5. K. Iijima, R. Takayama, Y. Tomita and I. Ueda., "Epitaxial growth and the crystallographic, dielectric, and pyroelectric properties of low thanam-modefied lead titanate thin films": J. Appl. Phys. 60, pp.2914, 1986.
6. G. A. Peterson, Jr. and J. R. McNell., "Effects of ocygen partial pressure on lead content of PLZT thin films produces by excimer laser deposition": Thin Solid Films. 220, pp.87, 1992.
7. 3 thin films by metalorganic chemical vapor deposition": J. Appl. Phys. 71, pp.1955, 1992.
8. H. Nakashima, S. Hazumi, T. Kamiya, K. Tominaga and M. Okada: Jpn. J. Appl. Phys. 33, pp.5139, 1994.
9. K. Suu, Y. Nishioka, A. Osawa, N. Tani and N. Nakamura., "Lead Content Control of PLZT Thin Films Prepared by RF Magnetron Sputtering": Integr. Ferroelectr. 14, pp.59-68, 1997.
10. 3 Ferroelectric Films by RF Sputtering on Large Substrate": Jpn. J. Appl. Phys. 35, pp.4967, 1996.
11. 3 Ferroelectric Thin Film": Jpn. J. Appl Phys. 36, pp.5789-5792, 1997.
12. 3 suputtering for FRAM production": to be published in Proceeding of ISAF'98.
13. T.D. Hadnagy and T. Davenport: Integrated Ferroelectrics 22, 183, 1998.
14. S.D. Traynor, T.D. Hadnagy and L. Kammerdiner: Integrated Ferroelectrics 16, 63, 1997.
15. F. Chu, G. Hickert, T.D. Hadnagy, T. Davenport and K. Suu:"Ferroelectric properties of PZT thin films prepared using ULVAC ZX-1000 sputtering system": to be published in Integrated Ferroelectrics.