Effects of ion etching and annealing in o2 atmosphere following ion etching on properties and chemistry of Sr0.9Bi2.1Ta2O9+a thin films

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 38, Issue 9 B, 1999, Pages 5423-5427

  Asami, Katsuhiko ^a   Koiwa, Ichiro ^b   Yamanobe, Tomomi ^b  

^a TOHOKU UNIVERSITY   (Japan)

^b OKI ELECTRIC INDUSTRY CO   (Japan)

Author keywords

Annealing effect; Composition deviation; Ferroelectric memories; Ion etching effect; Metallic Bi content; Sol gel method; SrBi2Ta2O9 thin film; Surface composition; X ray photoelectron spectrometry (XPS)

Indexed keywords

ANNEALING; CURRENT DENSITY; DATA STORAGE EQUIPMENT; ETCHING; FERROELECTRIC DEVICES; FERROELECTRIC MATERIALS; HYSTERESIS; LEAKAGE CURRENTS; OXYGEN; SOL-GELS; STRONTIUM COMPOUNDS; THIN FILMS;

FERROELECTRIC DATA STORAGE EQUIPMENT; STRONTIUM BISMUTH TANTALATE;

DIELECTRIC FILMS;

EID: 0033322003     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.38.5423     Document Type: Article

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