Thermal properties of H-related complexes in electron-irradiated Si doped with H

Physica B: Condensed Matter

Volumn 273-274, Issue , 1999, Pages 224-227

  Suezawa, Masashi ^a  

^a TOHOKU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION SPECTROSCOPY; ANNEALING; BINDING ENERGY; ELECTRON IRRADIATION; HYDROGEN; LIGHT ABSORPTION; POINT DEFECTS; QUENCHING; SEMICONDUCTOR DOPING;

ISOCHRONAL ANNEALING; ISOTHERMAL ANNEALING;

SEMICONDUCTING SILICON;

EID: 0033320454     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-4526(99)00458-5     Document Type: Article

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