Self-interstitial in electron-irradiated Si detected by optical absorption due to hydrogen bound to it

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 37, Issue 7 PART A, 1998, Pages

  Suezawa, Masashi ^a  

^a TOHOKU UNIVERSITY   (Japan)

Author keywords

Electron irradiation; Hydrogen; Optical absorption; Self interstitial; Silicon

Indexed keywords

ABSORPTION SPECTROSCOPY; ANNEALING; ELECTRON IRRADIATION; HYDROGEN; POINT DEFECTS; QUENCHING; SEMICONDUCTOR DOPING;

SELF-INTERSTITIALS;

SEMICONDUCTING SILICON;

EID: 0032119051     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.37.l806     Document Type: Article

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