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Volumn 36, Issue 6, 1989, Pages 2083-2091

Gallium arsenide solar cell radiation damage study

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON BEAMS; PROTONS; SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0024946273     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/23.45408     Document Type: Article
Times cited : (3)

References (14)
  • 1
    • 84939698716 scopus 로고
    • Electron and Proton Displacement Damage in Production Line Quality Silicon and Gallium Arsenide Solar Cells
    • Sydney, Australia, February
    • G. A. Herbert, et al., “Electron and Proton Displacement Damage in Production Line Quality Silicon and Gallium Arsenide Solar Cells,” Proceedings of the 4th Int. Photovoltaic Science and Engineering Conf., Sydney, Australia, February 1989, Vol. 2, pp. 819–825.
    • (1989) Proceedings of the 4th Int. Photovoltaic Science and Engineering Conf , vol.2 , pp. 819-825
    • Herbert, G.A.1
  • 3
    • 0021642571 scopus 로고
    • Radiation Effects in Silicon and Gallium Arsenide Solar Cells Using Isotropic and Normally Incident Radiation
    • September, see also Conf. Proc. of IEEE Photovoltaic Specialists Conf., 1984
    • B. E. Anspaugh and R. G. Downing, “Radiation Effects in Silicon and Gallium Arsenide Solar Cells Using Isotropic and Normally Incident Radiation,” JPL Pub. 84–61, September 1984; see also Conf. Proc. of IEEE Photovoltaic Specialists Conf., 23 (1984).
    • (1984) JPL Pub. 84 – 61 , vol.23
    • Anspaugh, B.E.1    Downing, R.G.2
  • 4
    • 0024174933 scopus 로고
    • Displacement Damage in GaAs Structures
    • Dec.
    • G. P. Summers, et al., “Displacement Damage in GaAs Structures,” IEEE Trans. Nucl. Science 35, 1221–1226, Dec. 1988.
    • (1988) IEEE Trans. Nucl. Science , vol.35 , pp. 1221-1226
    • Summers, G.P.1
  • 5
    • 0023565384 scopus 로고
    • Energy Dependence of Proton-Induced Displacement Damage in GaAs
    • Dec.
    • E. A. Burke, et al., “Energy Dependence of Proton-Induced Displacement Damage in GaAs,” IEEE Trans. Nucl. Sci. 34, 1220–1227, Dec. 1987.
    • (1987) IEEE Trans. Nucl. Sci , vol.34 , pp. 1220-1227
    • Burke, E.A.1
  • 6
    • 0023537392 scopus 로고
    • Radiation and Temperature Effects in Gallium Arsenide, Indium Phosphide and Silicon Solar Cells
    • New Orleans, May
    • I. Weinberg, et al., “Radiation and Temperature Effects in Gallium Arsenide, Indium Phosphide and Silicon Solar Cells,” Proceedings of the 19th IEEE Photovoltaic Specialists Conf., New Orleans, p. 548, May 1987.
    • (1987) Proceedings of the 19th IEEE Photovoltaic Specialists Conf , pp. 548
    • Weinberg, I.1
  • 8
    • 0024908550 scopus 로고
    • Radiation Damage Experiment on Gallium Arsenide Solar Cells
    • Arlington, Va., August
    • G. A. Herbert, et al., “Radiation Damage Experiment on Gallium Arsenide Solar Cells,” Proceedings of the 1989 IECEC, Arlington, Va., August 1989, Vol. 1, pp. 415–421.
    • (1989) Proceedings of the 1989 IECEC , vol.1 , pp. 415-421
    • Herbert, G.A.1
  • 9
    • 84939737254 scopus 로고
    • Developments Toward an 18% Efficient Silicon Solar Cell
    • April
    • A. Meulenberg, “Developments Toward an 18% Efficient Silicon Solar Cell,” Final Report NASA CR 168141, April 1983.
    • (1983) Final Report NASA CR 168141
    • Meulenberg, A.1
  • 10
    • 0021583810 scopus 로고
    • Evidence for a Permanent Single-Event Event Upset Mechanism
    • Dec.
    • A. Meulenberg, “Evidence for a Permanent Single-Event Event Upset Mechanism,” IEEE Trans. Nucl. Sci. 31, 1280–1283, Dec. 1984.
    • (1984) IEEE Trans. Nucl. Sci , vol.31 , pp. 1280-1283
    • Meulenberg, A.1
  • 11
    • 0015982447 scopus 로고
    • Damage in Silicon Cells from 2 to 155 MeV Protons
    • November 13-15, Conference Record
    • A. Meulenberg and F. C. Treble, “Damage in Silicon Cells from 2 to 155 MeV Protons,” 10th IEEE Photovoltaic Specialists Conference, November 13-15, 1973, Conference Record, pp. 359–365.
    • (1973) 10th IEEE Photovoltaic Specialists Conference , pp. 359-365
    • Meulenberg, A.1    Treble, F.C.2
  • 12
    • 0016072218 scopus 로고
    • Measurement of Diffusion Length in Solar Cells
    • June
    • J. H. Reynolds and A. Meulenberg, “Measurement of Diffusion Length in Solar Cells,” Journal of Applied Physics, June 1974, pp. 2582–2592.
    • (1974) Journal of Applied Physics , pp. 2582-2592
    • Reynolds, J.H.1    Meulenberg, A.2
  • 13
    • 84927553170 scopus 로고
    • Carrier Generation and Recombination in P/N Junctions and P/N Junction Characteristics
    • Sept
    • C. T. Sah, R. N. Noyce, and W. Shockley, “Carrier Generation and Recombination in P/N Junctions and P/N Junction Characteristics,” Proc. IRE 45, Sept 1957, pp. 1228–1243.
    • (1957) Proc. IRE , vol.45 , pp. 1228-1243
    • Sah, C.T.1    Noyce, R.N.2    Shockley, W.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.