A Model For The Bipolar-Like Response Of Gaas Mesfets To A High Dose Rate Environment

IEEE Transactions on Nuclear Science

Volumn 41, Issue 6, 1994, Pages 2494-2501

  Islam, N E ^a   Howard, J W ^a   Fageeba, O ^a   Block, R C ^a   Becker, M ^a  

^a Department of Nuclear Engineering and Engineering Physics Rensselrer Polytechnic Institute ^*  (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BIPOLAR TRANSISTORS; CARRIER CONCENTRATION; CHARGE CARRIERS; COMPUTER SIMULATION; ELECTRIC CURRENTS; GAIN CONTROL; LINEAR ACCELERATORS; RADIATION EFFECTS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MODELS; TRANSIENTS;

DRAIN CURRENT RESPONSE; EXCESS CARRIERS; RADIATION TRANSIENT;

MESFET DEVICES;

EID: 0028694251     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/23.340607     Document Type: Article

References (14)

1. J. W. Howard, N. E. Islam, A. N. Ishaque, M. Becker, R. C. Block, “Transient Radiation Studies of GaAs MESFETs”, IEEE Transactions on Nuclear Science, NS37, 2050 (1990).
2. L. D. Flesner, “Gate Charge Collection and Induced Drain Current in GaAs FETs”, IEEE Trans. Nucl. Sci. NS32, 4110 (1985).
3. Sasunari Umemoto, Nobutoshi Matsunanga and Kazumichi Mitsusada, “ A Bipolar Mechanism For Alpha-Particle-Induced Induced Soft Errors in GaAs Integrated Circuits”, IEEE Transactions on Electron Devices Vol. 36. No. 5 August 1989.
4. A. Campbell, A. Knudson, D. McMorrow, W. Anderson, J. Roussos, S. Espy, S. Buchner, K. Kang, and S. Kerns, “Ion Induced Charge Collection In GaAs MESFETs,” IEEE Trans. Nuc. Sci. NS36, 2292 (1989).
5. A. R. Knudson, A. B. Campbell, D. McMorrow, S. Buchner, K. Kang, T. Weatherford, V. Srinivas, G. A. Swartzlander Jr. and Y. J. Chen, “Pulsed Laser-Induced Charge Collection in GaAs MESFETs”, IEEE Trans. Nuc. Sci. Vol. 37, 1909 (1990).
6. S. Buchner, A. Knudson, K. Kang, and A. B. Campbell, “Charge Collection From Focused Picosecond Laser Pulses, IEEE Trans. Nuc. Sci. NS35, 1517 (1988).
7. M. R. Pinto, C. S. Rafferty, and R. W. Dutton, PISCES IIB Users Manual, Stanford Electronics Laboratory, Dept of Elec. Eng, Stanford University (1984).11
8. K. Lehovec, H. Pao, “ Built in space charge at Junction Between Heavily Doped and Semi-Insulating GaAs Layers”, Solid State Electronics, Vol 31, No. 9, p1433-1440. 1988.
9. S.M. Sze, Physics of Semiconductor Devices, John Wiley & Sons, New York, 1981.
10. J. W. Howard Jr., “Analysis of Photocurrent production in GaAs MESFETs”, Ph.D. Thesis, Rensselaer Polytechnic Institute, Troy, New York, May 1990.
11. C.J. Kirk, Jr. “ A Theory of Transistor Cutoff frequency (IT) fall off at High Current Density”, IRE TRAN. Electron Devices, ED-9, 164, 1962.
12. L. Defenn, S. Decoutere, C. Claeys, G. Declerck, J. Heyman and D. Beernaert, “The Influence of the interface trap density on the performance of bipolar devices”, IEEE Trans. on Electr. Devices,1989.
13. R. Zuleeg, “Radiation Effects in GaAs FET Devices”, Proc. IEEE Vol. 77 No. 3, 389 (1989).
14. J. Nishizawa, T. Ohmi, Y. Mochida, T. Matsuyama, and S. Lida, “Bipolar Mode Static Induction Transistor (BSIT)High Speed Switching Device, IEDM Tech. Dig. pp 676–679, (1978).