· Temperature-Dependent Delay Time in GaAs High-Power High-Speed Photoconductive Switching Devices

IEEE Photonics Technology Letters

Volumn 7, Issue 1, 1995, Pages 56-58

  Zu, L Q ^a   Lu, Y ^a   Shen, H ^b   Dutta, M ^b  

^a RUTGERS UNIVERSITY   (United States)

^b U S ARMY RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; ELECTRIC FIELD EFFECTS; ENERGY GAP; LIGHTNING; PHOTOCONDUCTING DEVICES; PHOTONS; SEMICONDUCTING GALLIUM ARSENIDE; SWITCHING; THERMAL EFFECTS;

ABSORPTION EDGE SHIFTING; BAND GAP; ELECTRO ABSORPTION; TEMPERATURE DEPENDENCE; TIME DEPENDENT DELAY TIME;

OPTICAL SWITCHES;

EID: 0029196808     PISSN: 10411135     EISSN: 19410174     Source Type: Journal    
DOI: 10.1109/68.363377     Document Type: Article

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