Influence of native oxides on the reliability of ultrathin gate oxide

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 37, Issue 2, 1998, Pages 397-401

  Takeda, Mikako ^a   Ohwaki, Takeshi ^a   Fujii, Hideo ^a   Kusumoto, Eisuke ^a   Kaihara, Yoshiyuki ^b   Takai, Yoshizo ^b   Shimizu, Ryuichi ^b  

^a KOBE STEEL LTD   (Japan)

^b OSAKA UNIVERSITY   (Japan)

Author keywords

Infrared spectroscopy; MOS; Silicon native oxide; TDDB; Ultrathin gate oxide; Wet cleaning process; X ray photoelectron spectroscopy

Indexed keywords

ANODES; DIELECTRIC PROPERTIES OF SOLIDS; ELECTRIC BREAKDOWN OF SOLIDS; ELECTRIC CHARGE; FOURIER TRANSFORM INFRARED SPECTROSCOPY; GATES (TRANSISTOR); MOS DEVICES; OXIDES; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DIODES; ULTRATHIN FILMS; X RAY PHOTOELECTRON SPECTROSCOPY;

ATTENUATED TOTAL REFLECTION (ATR) ANALYSIS; TIME DEPENDENT DIELECTRIC BREAKDOWN (TDDB);

SEMICONDUCTING FILMS;

EID: 0032003713     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.37.397     Document Type: Article

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