Highly reliable SiO2 films formed by UV-O2 oxidation

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 37, Issue 3 SUPPL. B, 1998, Pages 1122-1124

  Teramoto, Akinobu ^a   Kobayashi, Kiyoteru ^a   Ohno, Yoshikazu ^a   Hirayama, Makoto ^a  

^a MITSUBISHI ELECTRIC CORPORATION   (Japan)

Author keywords

Hole trap; Low temperature oxidation; Silicon dioxide; Stress induced leakage current; Time dependent dielectric breakdown; Ultraviolet rays

Indexed keywords

EID: 0141751206     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.37.1122     Document Type: Article

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