메뉴 건너뛰기




Volumn 97, Issue 1-3, 1997, Pages 574-581

Enhanced deposition rate of d.c. reactively sputtered TiO2 films by means of low-frequency modulation of the discharge current

Author keywords

Discharge instability; Low frequency modulation; Reactive sputtering; Titanium dioxide

Indexed keywords

ARGON; ELECTRIC DISCHARGES; FILM GROWTH; METALLIC FILMS; NUCLEATION; OXYGEN; TITANIUM DIOXIDE;

EID: 0031386713     PISSN: 02578972     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0257-8972(97)00177-1     Document Type: Article
Times cited : (17)

References (17)
  • 7
    • 0348212791 scopus 로고    scopus 로고
    • Fr. Patent 92-15924, 30 Dec 1992; Fur. Patent 93 403153.5, 23 Dec 1993; US Patent 08/172,549, 23 Dec 1993
    • B. Stauder, F. Perry, A. Billard, P. Pigeat, G. Henrion, C. Frantz, Fr. Patent 92-15924, 30 Dec 1992; Fur. Patent 93 403153.5, 23 Dec 1993; US Patent 08/172,549, 23 Dec 1993.
    • Stauder, B.1    Perry, F.2    Billard, A.3    Pigeat, P.4    Henrion, G.5    Frantz, C.6
  • 12
    • 0346952101 scopus 로고
    • INPL Thesis, Nancy
    • A. Billard, INPL Thesis, Nancy 1991.
    • (1991)
    • Billard, A.1
  • 14
    • 0347583152 scopus 로고
    • INPL Thesis, Nancy
    • B. Stauder, INPL Thesis, Nancy 1994.
    • (1994)
    • Stauder, B.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.