Effect of ultrathin top silicon layers on the X-ray photoelectron emission from the buried oxide in silicon-on-insulator wafers

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 38, Issue 9 A/B, 1999, Pages

  Katayama, Toshiharu ^a,b   Yamamoto, Hidekazu ^b   Ikeno, Masahiko ^b   Mashiko, Yoji ^b   Kawazu, Satoru ^c   Umeno, Masataka ^a  

^a OSAKA UNIVERSITY   (Japan)

^b MITSUBISHI ELECTRIC CORPORATION   (Japan)

^c KOCHI UNIVERSITY OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL ORIENTATION; ELECTRON EMISSION; ELECTRON SCATTERING; SILICON ON INSULATOR TECHNOLOGY; X RAY DIFFRACTION ANALYSIS; X RAY PHOTOELECTRON SPECTROSCOPY;

ANGLE-RESOLVED X RAY PHOTOELECTRON SPECTROSCOPY (AR-XPS); X RAY PHOTOELECTRON DIFFRACTION (XPD);

SILICON WAFERS;

EID: 0033311461     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.38.l1058     Document Type: Article

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