Kikuchi-band analysis of X-ray photoelectron diffraction fine structure of Si(100) by precise angle-resolved X-ray photoelectron spectroscopy

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 38, Issue 3 A, 1999, Pages 1547-1552

  Katayama, Toshiharu ^a,b   Yamamoto, Hidekazu ^a   Mashiko, Yoji ^a   Koyama, Hiroshi ^a,d   Kawazu, Satoru ^c   Umeno, Masataka ^b  

^a MITSUBISHI ELECTRIC CORPORATION   (Japan)

^b OSAKA UNIVERSITY   (Japan)

^c KOCHI UNIVERSITY OF TECHNOLOGY   (Japan)

^d JEOL LTD   (Japan)

Author keywords

Angle resolved X ray photoelectron spectroscopy (ARXPS); Forward focusing; Kikuchi pattern; Si(100); SOI; X ray photoelectron diffraction (XPD)

Indexed keywords

ELECTRON EMISSION; SEMICONDUCTOR DEVICE STRUCTURES; SILICON ON INSULATOR TECHNOLOGY; SILICON WAFERS; ULTRATHIN FILMS; X RAY DIFFRACTION ANALYSIS; X RAY PHOTOELECTRON SPECTROSCOPY;

KIKUCHI BAND; POLAR ANGLE INTENSITY DISTRIBUTION;

SEMICONDUCTING SILICON;

EID: 0032677697     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.38.1547     Document Type: Article

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