Elimination of X-ray photoelectron diffraction effect of Si(100) for accurate determination of SiO2 overlayer thickness

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 38, Issue 7 A, 1999, Pages

  Katayama, Toshiharu ^a   Yamamoto, Hidekazu ^a   Ikeno, Masahiko ^a   Mashiko, Yoji ^a   Kawazu, Satoru ^a   Umeno, Masataka ^a  

^a OSAKA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; ELASTICITY; HYDROGEN; SILICA; SUBSTRATES; X RAY DIFFRACTION; X RAY PHOTOELECTRON SPECTROSCOPY;

ANGLE-RESOLVED X RAY PHOTOELECTRON SPECTROSCOPY (AR-XPS); X RAY PHOTOELECTRON DIFFRACTION (XPD) EFFECTS;

SEMICONDUCTING SILICON;

EID: 0032594948     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.38.l770     Document Type: Article

References (14)