Strontium bismuth tantalate based ferroelectric gate field effect transistor with yttrium oxide as the buffer layer

Materials Research Society Symposium - Proceedings

Volumn 493, Issue , 1998, Pages 465-470

  Lim, M H ^a   Kalkur, T S ^a   Kim, Y T ^a  

^a UNIVERSITY OF COLORADO   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

FERROELECTRIC MATERIALS; HYSTERESIS; OXIDES; POLARIZATION; SILICON; TANTALUM COMPOUNDS; YTTRIUM COMPOUNDS;

GATE FIELD EFFECT TRANSISTORS;

GATES (TRANSISTOR);

EID: 0031673350     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (9)