Precise control of two dimensional growth of InAs on GaAs (111) A surfaces studied by scanning tunneling microscopy

Applied Surface Science

Volumn 112, Issue , 1997, Pages 138-141

  Yamaguchi, H ^a,b   Belk, J G ^a   Zhang, X M ^a   Sudijono, J L ^a   Fahy, M R ^a   Jones, T S ^a   Joyce, B A ^a  

^a IMPERIAL COLLEGE LONDON   (United Kingdom)

^b Kashino Diverse Brain Research Laboratory of NTT Communication Science Laboratories   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DISLOCATIONS (CRYSTALS); REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; RELAXATION PROCESSES; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH; STRAIN; SUBSTRATES; SURFACES;

ISLAND FORMATION; STRAIN RELAXATION;

MOLECULAR BEAM EPITAXY;

EID: 0031546894     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(96)01021-5     Document Type: Article

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