Surface structure control of GaAs (1 1 1)A vicinal substrates by metal-organic vapor-phase epitaxy

Journal of Crystal Growth

Volumn 183, Issue 1-2, 1998, Pages 43-48

  Lee, Jeong Sik ^a,b   Isshiki, Hideo ^a   Sugano, Takuo ^a   Aoyagi, Yoshinobu ^a  

^a INST OF PHYS AND CHEMICAL RESEARCH   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

(1 1 1)a vicinal substrate; Gaas; Metal organic vapor phase epitaxy; Multistep

Indexed keywords

ATOMIC FORCE MICROSCOPY; HIGH TEMPERATURE EFFECTS; METALLORGANIC VAPOR PHASE EPITAXY; SATURATION (MATERIALS COMPOSITION); SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR GROWTH; SUBSTRATES; SURFACE STRUCTURE;

VICINAL SUBSTRATES;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0031696764     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(97)00393-X     Document Type: Article

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