In-situ monitoring of In 0.5 Ga 0.5 As quantum dot formation during metalorganic vapor phase epitaxy by fast-nulling ellipsometry

Applied Surface Science

Volumn 141, Issue 1-2, 1999, Pages 114-118

  Lee, Jeong Sik ^a   Sugou, Shigeo ^a   Ren, Hong Wen ^a   Masumoto, Yasuaki ^a   Kurihara, Kaori ^b  

^a JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^b NEC CORPORATION   (Japan)

Author keywords

73.61.Ey; 81.05.Ea; 81.15.Gh; APN; Atomic force microscopy; EK; EL; Epitaxy; Gallium arsenide; GD; Indium arsenide; Morphology; OBM; QBE

Indexed keywords

ATOMIC FORCE MICROSCOPY; ELLIPSOMETRY; METALLORGANIC VAPOR PHASE EPITAXY; MORPHOLOGY; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; SURFACE ROUGHNESS;

FAST-NULLING ELLIPSOMETRY; SECOND INFLECTION POINT;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0033100817     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(98)00370-5     Document Type: Article

References (7)

1. Sakaki H. Jpn. J. Appl. Phys. 2, Lett. 19:1980;L735.
2. Goldstein L., Glas F., Marzin J.Y., Charasse M.N., Roux G.L. Appl. Phys. Lett. 47:1985;1099.
3. Notzel R., Temmyo J., Tamamura T. Jpn. J. Appl. Phys. 2, Lett. 33:1994;L275.
4. Oshinowo J., Nishioka M., Ishida S., Arakawa Y. Appl. Phys. Lett. 65:1994;1421.
5. Nabetani Y., Ishikawa T., Noda S., Sasaki A. J. Appl. Phys. 76:1994;347.
6. Aspnes D.E. Surf. Science. 307-309:1994;1017.
7. C.F. Bohren, D.B. Huffman, Absorption and Scattering of Light by Small Particles, Wiley, New York, 1983, p. 136.