Stability of amorphous silicon thin film transistors

Materials Research Society Symposium - Proceedings

Volumn 557, Issue , 1999, Pages 365-370

  Wehrspohn, R B ^a   Deane, S C ^a   French, I D ^a   Hewett, J ^a   Powell, M J ^a  

^a PHILIPS RESEARCH LABORATORIES   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; ATOMS; CHEMICAL BONDS; CRYSTAL DEFECTS; DEPOSITION; HYDROGEN BONDS; MATHEMATICAL MODELS; THERMAL EFFECTS;

AMORPHOUS SILICON THIN FILM TRANSISTORS; DANGLING BOND DEFECTS; URBACH ENERGY;

THIN FILM TRANSISTORS;

EID: 0033298865     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-557-365     Document Type: Article

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