The properties of a-SiC:H and a-SiGe:H films deposited by 55 kHz PECVD

Materials Research Society Symposium - Proceedings

Volumn 557, Issue , 1999, Pages 43-48

  Budaguan, B G ^a   Sherchenkov, A A ^a   Berdnikov, A E ^b   Metselaar, J W ^c   Aivazov, A A ^d  

^a Institute of Electronic Technology   (Russian Federation)

^b RUSSIAN ACADEMY OF SCIENCES   (Russian Federation)

^c DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

^d Unisil Corporation   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; BAND STRUCTURE; CHEMICAL REACTIONS; CRYSTAL MICROSTRUCTURE; FILM GROWTH; HYDROGEN; INFRARED RADIATION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DOPING; SILICON CARBIDE;

OPTICAL BANDGAP; OPTOELECTRONIC PROPERTIES; SILICON GERMANIUM;

THIN FILMS;

EID: 0033298785     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-557-43     Document Type: Article

References (8)

1. B.G. Budaguan, A.A. Aivazov, A. Yu Sazonov, A. A. Popov.'and A. E. Berdnikov, Mat. Res. Soc. Symp. Proc. 467, p. 585 (1997).
2. B.G.Budaguan, et ail. A.A.Sherchenkov, D.A.Stryahilev, A.YaSazonov, A.G.Radoselsky, V.D.Chernomordik, A.A.Popov, and J.W.Metselaar, J. Electrochem. Soc. 145,2508 (1998).
3. . LSolomon and L.R Tessler, Mat. Res. Soc. Symp. Proc. 336, p. 505 (1994).
4. . G.Ambrosone S.Catalanotti, U.Coscia, S.Mormone, A.Cutolo, G.Breglio, Proc. 2nd WCPSEC, Vienna, 1, p. 770 (1998).
5. .I. Pereyra, M.N.P. Carreno, M.H. Tabacniks, R.J. Prado, and M.C.A.Fantini, J. Appl. Phys. 84, p. 2371 (1998).
6. B.G.Budaguan, A.A.Aivazov, Mat. Res. Soc. Symp. Proc. 513, p. 387 (1998).
7. Y-P.Chou, S-C.Lee, J. Appl. Phys. 83, p. 4111 (1998).
8. J. Folsch, F.Finger, T.Kulessa, F.Siebke, W.Beyer, H.Wagner, Mat.Res.Soc.Symp. Proc. 377, p.517(1995).