Alternative gate electrode material of fully depleted SOI CMOS for low power applications

IEEE International SOI Conference

Volumn , Issue , 1997, Pages 20-21

  Hsiao, Tommy C ^a   Wang, Albert W ^a   Saraswat, Krishna ^a   Woo, Jason C S ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITORS; CMOS INTEGRATED CIRCUITS; GATES (TRANSISTOR); ION IMPLANTATION; POLYCRYSTALLINE MATERIALS; POWER ELECTRONICS; SEMICONDUCTING GERMANIUM; SEMICONDUCTOR DOPING; ULTRATHIN FILMS;

GATE WORK FUNCTION ENGINEERING; N CHANNEL METAL OXIDE SEMICONDUCTORS (NMOS); P CHANNEL METAL OXIDE SEMICONDUCTORS (NMOS);

SILICON ON INSULATOR TECHNOLOGY;

EID: 0031380675     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)