The potential of ultrathin-film soi devices for lowpower and high-speed applications

IEICE Transactions on Electronics

Volumn E80-C, Issue 3, 1997, Pages 443-454

  Kadot, Yuichi ^a  

^a NTT CORPORATION   (Japan)

Author keywords

CMOS; Ion Power; Ion Voltage; SIMOX; SOI

Indexed keywords

CAPACITANCE; CMOS INTEGRATED CIRCUITS; CURRENT VOLTAGE CHARACTERISTICS; FREQUENCY DIVIDING CIRCUITS; INTEGRATED CIRCUIT MANUFACTURE; LOGIC CIRCUITS; LSI CIRCUITS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR JUNCTIONS; SOLAR CELLS; TELECOMMUNICATION SYSTEMS;

INTERNAL THERMAL OXIDATION TECHNOLOGY; PORTABLE DIGITAL EQUIPMENT; TOTAL PARASITIC CAPACITANCE;

SILICON ON INSULATOR TECHNOLOGY;

EID: 0031100052     PISSN: 09168524     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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