Carrier profile of the Si-doped layer in GaAs fabricated by a low-energy focused ion beam/molecular beam epitaxy combined system

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 17, Issue 6, 1999, Pages 3072-3074

  Yanagisawa, Junichi ^a   Goto, Takayuki ^a   Hada, Takuo ^a   Nakai, Masaya ^a   Wakaya, Fujio ^a   Yuba, Yoshihiko ^a   Gamo, Kenji ^a  

^a OSAKA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0033272501     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.590985     Document Type: Article

References (11)

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