Analysis of light elements on Si wafer by vapor-phase decomposition/total reflection X-ray fluorescence

Bunseki Kagaku

Volumn 48, Issue 11, 1999, Pages 1005-1011

  Yamagami, Motoyuki ^a   Nonoguchi, Masahiro ^a   Yamada, Takashi ^a   Shoji, Takashi ^a   Utaka, Tadashi ^b   Mori, Yoshihiro ^c   Nomura, Shigeaki ^c   Taniguchi, Kazuo ^c   Wakjta, Hisanobu ^d   Ikeda, Shigerou ^e  

^a RIGAKU CORPORATION   (Japan)

^b NIPPON STEEL CORPORATION   (Japan)

^c OSAKA ELECTRO COMMUNICATION UNIVERSITY   (Japan)

^d FUKUOKA UNIVERSITY   (Japan)

^e RITSUMEIKAN UNIVERSITY   (Japan)

Author keywords

Light element; Semiconductor; Total reflection X ray fluorescence; Ultra trace analysis; Vapor phase decomposition

Indexed keywords

EID: 0033271697     PISSN: 05251931     EISSN: None     Source Type: Journal    
DOI: 10.2116/bunsekikagaku.48.1005     Document Type: Article

References (23)

1. Web site: http://notes.sematech.org/ntrs/Pub
2. M. Hourai, T Naridomi, Y. Oka, K. Murakami, S. Sumita, N. Fujino, T. Shiraiwa: Jpn J. Appl. Phys., 27, L2361 (1988).
3. A. Shimazaki, H. Hiratsuka, Y. Matsushita, S. Yoshii: Extended Abstracts Conference on Solid State Devices and Materials, p. 281 (1984).
4. A. Shimazaki. Proc. ECS. Defects in Silicon 11, p. 47 (1991).
5. J. Fucsko, S. S. Tan, M. K. Balazs: J. Electrochem. Soc., 140, 1105 (1993).
6. N. Streckfuß, L. Frey, G. Zielonka, F. Kroninger, C. Ryzlewicz, H. Ryssel: Fresenius' J. Anal. Chem., 343, 765 (1991).
7. Y. Mori, R. Uemura, K. Shimanoe: Spectrochim. Acta, B52, 823 (1997).
8. M. B. Shabani: J. Electrochem. Soc., 143, 2025 (1996).
9. Y. Mori, K.. Shimanoe, T. Sakon: Anal. Sci., 11, 499 (1995).
10. Y. Mori, K. Kubota, K. Shimanoe, T. Sakon: Anal. Sci., 14, 275 (1998).
11. C. Streli, P. Wobrauschek, V. Bauer, P. Kregsamer, R. Görgl, P. Pianetta, R. Ryon, S. Pahlke, L. Fabry: Spectrochim. Acta, B52, 861 (1997).