Cleaved and etched facet nitride laser diodes

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 4, Issue 3, 1998, Pages 505-508

  Abare, A C ^b   Mack, M P ^c   Hansen, M ^b   Sink, R K ^b   Kozodoy, P ^b   Keller, S ^b   Speck, J S ^b   Bowers, J E ^{a,b,d,e,f,g,h,i}   Mishra, U K ^b   Coldren, L A ^a,b   DenBaars, S P ^b  

^a IEEE

^b University of California   (United States)

^c AIR FORCE RESEARCH LABORATORY   (United States)

^d STANFORD UNIVERSITY   (United States)

^e Multidisc Optical Switching T ^*  (United States)

^f Adv Mat Purification Water Syst   (United States)

^g HONEYWELL   (United States)

^h UNIVERSITY OF CALIFORNIA   (United States)

ⁱ AMERICAN PHYSICAL SOCIETY   (United States)

Author keywords

Blue; Diode; GaN; InGaN; Laser; MQW; Nitride; Pulsed; Room temperature

Indexed keywords

CHEMICAL REACTORS; CURRENT DENSITY; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NITRIDES; REACTIVE ION ETCHING; SAPPHIRE; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; THERMAL EFFECTS;

MODIFIED TWO FLOW HORIZONTAL REACTORS; NITRIDE LASER DIODES;

QUANTUM WELL LASERS;

EID: 0032066858     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/2944.704109     Document Type: Article

References (11)

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