Comparative study of MOVPE growth of InN on GaAs(111) substrates using a nitrided or grown GaN buffer layer

Physica Status Solidi (A) Applied Research

Volumn 176, Issue 1, 1999, Pages 595-598

  Yamamoto, A ^a   Adachi, M ^a   Arita, T ^a   Sugiura, T ^a   Hashimoto, A ^a  

^a UNIVERSITY OF FUKUI   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLINE MATERIALS; METALLORGANIC VAPOR PHASE EPITAXY; MORPHOLOGY; NITRIDING; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SUBSTRATES;

CRYSTAL QUALITY;

SEMICONDUCTING FILMS;

EID: 0033221926     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/(SICI)1521-396X(199911)176:1<595::AID-PSSA595>3.0.CO;2-V     Document Type: Article

References (5)

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4. A. YAMAMOTO, Y. YAMAUCHI, M. OHKUBO, and A. HASHIMOTO, J. Cryst. Growth 174, 641 (1997).
5. A. YAMAMOTO, Y. YAMAUCHI, M. OHKUBO, A. HASHIMOTO, and T. SAITOH, Solid State Electronics 41, 149 (1997).