Uniform formation of a quarter-micron period diffraction grating on a 2-inch InP wafer using reactive beam etching

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 1997, Pages 574-577

  Oku, Satoshi ^a   Nakao, Masashi ^a   Shibata, Yasuo ^a   Tamamura, Toshiaki ^a   Itaya, Yoshio ^a  

^a NTT CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON CYCLOTRON RESONANCE; ELECTRONS; ION SOURCES; PLASMA SOURCES; REACTIVE ION ETCHING; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE MANUFACTURE;

GAS REACTIVE BEAM ETCHING METHOD; SECONDARY ELECTRONS;

DIFFRACTION GRATINGS;

EID: 0030653823     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)