Carrier distribution, spontaneous emission and gain engineering in lasers with nonidentical quantum wells

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 5, Issue 3, 1999, Pages 620-626

  Newell, T C ^a   Wright, M W ^b,c   Hou, H ^d   Lester, L F ^a  

^a UNIVERSITY OF NEW MEXICO   (United States)

^b AIR FORCE RESEARCH LABORATORY   (United States)

^c CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

^d EMCORE Corporation   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; ELECTRIC FIELDS; ELECTRONIC DENSITY OF STATES; ENERGY GAP; GAIN MEASUREMENT; HETEROJUNCTIONS; LIGHT MEASUREMENT; PHOTONS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MODELS; SPONTANEOUS EMISSION;

PHOTON ENERGIES; SEPARATE CONFINEMENT HETEROSTRUCTURES;

QUANTUM WELL LASERS;

EID: 0033123967     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/2944.788426     Document Type: Article

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